Caricamento...
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...
Salvato in:
| Autori principali: | , , , , , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2012
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3494552/ https://ncbi.nlm.nih.gov/pubmed/22937992 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-493 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|