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High-frequency self-aligned graphene transistors with transferred gate stacks
Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene tran...
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| Asıl Yazarlar: | , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
National Academy of Sciences
2012
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3406869/ https://ncbi.nlm.nih.gov/pubmed/22753503 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1205696109 |
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