High-frequency self-aligned graphene transistors with transferred gate stacks

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene tran...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Prif Awduron: Cheng, Rui, Bai, Jingwei, Liao, Lei, Zhou, Hailong, Chen, Yu, Liu, Lixin, Lin, Yung-Chen, Jiang, Shan, Huang, Yu, Duan, Xiangfeng
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: National Academy of Sciences 2012
Pynciau:
Physical Sciences
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC3406869/
https://ncbi.nlm.nih.gov/pubmed/22753503
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1205696109
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