Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Abstract To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential. However, due to the stochastic nature of filament production, this filamentary type resistive switching has...
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| Автори: | , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2023-07-01
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| Серія: | Advanced Materials Interfaces |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/admi.202300290 |
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