Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization b...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
SpringerOpen
2022-06-01
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| Series: | Nanoscale Research Letters |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1186/s11671-022-03696-2 |
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