Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization b...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
SpringerOpen
2022-06-01
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| Sraith: | Nanoscale Research Letters |
| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1186/s11671-022-03696-2 |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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