Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Abstract To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential. However, due to the stochastic nature of filament production, this filamentary type resistive switching has...

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Autori principali:	Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2023-07-01
Serie:	Advanced Materials Interfaces
Soggetti:	neuromorphic system resistive random‐access memory synaptic plasticity TiN nanocrystal vertical resistive random‐access memory
Accesso online:	https://doi.org/10.1002/admi.202300290
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