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Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical inf...

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Principais autores: Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2021-01-01
Serier:Nanomaterials
Fag:
resistive switching
memristor
synaptic device
neural network simulation
X-ray photoelectron spectroscopy
neuromorphic system
Online adgang:https://www.mdpi.com/2079-4991/11/2/315
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