Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical inf...

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Autori principali:	Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2021-01-01
Serie:	Nanomaterials
Soggetti:	resistive switching memristor synaptic device neural network simulation X-ray photoelectron spectroscopy neuromorphic system
Accesso online:	https://www.mdpi.com/2079-4991/11/2/315
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