Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Abstract To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential. However, due to the stochastic nature of filament production, this filamentary type resistive switching has...
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| Principais autores: | , , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Wiley-VCH
2023-07-01
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| Serier: | Advanced Materials Interfaces |
| Fag: | |
| Online adgang: | https://doi.org/10.1002/admi.202300290 |
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