Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas. The simulation results show that a larger Al content or greater thickness for the AlGaN barrier layer can induce a higher two-dim...

Disgrifiad llawn

Manylion Llyfryddiaeth

Prif Awduron:	Haiping Wang, Haifan You, Jiangui Yang, Minqiang Yang, Lu Wang, Hong Zhao, Zili Xie, Dunjun Chen
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	MDPI AG 2022-12-01
Cyfres:	Micromachines
Pynciau:	ultraviolet (UV) phototransistors (PTs) p-GaN/AGaN/GaN HEMTs Silvaco simulation
Mynediad Ar-lein:	https://www.mdpi.com/2072-666X/13/12/2210
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!