Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the...

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Detalles Bibliográficos

Principais autores:	Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2023-07-01
Series:	Micromachines
Assuntos:	AlGaN/GaN HEMTs self-heating effect channel temperature channel electric field
Acceso en liña:	https://www.mdpi.com/2072-666X/14/7/1457
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