Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2023-07-01
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| Colecção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/14/7/1457 |
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