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Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthresh...

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Hlavní autoři: Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin
Médium: Artigo
Jazyk:Inglês
Vydáno: IOP Publishing 2025-01-01
Edice:Journal of Physics Communications
Témata:
2DEG
enhancement mode
TCAD
subthreshold swing
p-GaN/AlGaN/GaN HEMT
electron mobility
On-line přístup:https://doi.org/10.1088/2399-6528/add5b8
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