Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthresh...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IOP Publishing 2025-01-01
Цуврал:	Journal of Physics Communications
Нөхцлүүд:	2DEG enhancement mode TCAD subthreshold swing p-GaN/AlGaN/GaN HEMT electron mobility
Онлайн хандалт:	https://doi.org/10.1088/2399-6528/add5b8
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!