Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas. The simulation results show that a larger Al content or greater thickness for the AlGaN barrier layer can induce a higher two-dim...

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Egile Nagusiak:	Haiping Wang, Haifan You, Jiangui Yang, Minqiang Yang, Lu Wang, Hong Zhao, Zili Xie, Dunjun Chen
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	MDPI AG 2022-12-01
Saila:	Micromachines
Gaiak:	ultraviolet (UV) phototransistors (PTs) p-GaN/AGaN/GaN HEMTs Silvaco simulation
Sarrera elektronikoa:	https://www.mdpi.com/2072-666X/13/12/2210
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