Impact of traps on current-voltage characteristic of n+-n-n+ diode
A model of n+-n-n+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throug...
I tiakina i:
| Kaituhi matua: | |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-07-01
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| Rangatū: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Ngā marau: | |
| Urunga tuihono: | http://journal-spqeo.org.ua/n2_2017/P210-216abstr.html |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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