Impact of traps on current-voltage characteristic of n+-n-n+ diode
A model of n+-n-n+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throug...
Gardado en:
| Autor Principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-07-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Assuntos: | |
| Acceso en liña: | http://journal-spqeo.org.ua/n2_2017/P210-216abstr.html |
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