High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 ^6 –10 ^8 and excellen...
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| Hoofdauteurs: | , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
IOP Publishing
2024-01-01
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| Reeks: | Applied Physics Express |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.35848/1882-0786/ad15f4 |
| Tags: |
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