Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD
AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed. At forward bias, high ideality factors were obtained, indicating a large deviation from the ideal thermionic emission model. At reve...
I tiakina i:
| Ngā kaituhi matua: | , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IEEE
2017-01-01
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| Rangatū: | IEEE Journal of the Electron Devices Society |
| Ngā marau: | |
| Urunga tuihono: | https://ieeexplore.ieee.org/document/8047476/ |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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