Impact of traps on current-voltage characteristic of n+-n-n+ diode
A model of n+-n-n+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throug...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-07-01
|
| Schriftenreihe: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Schlagworte: | |
| Online-Zugang: | http://journal-spqeo.org.ua/n2_2017/P210-216abstr.html |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|