Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> of 3.3 and a...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/8737747/ |
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