Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation
The radiation damage caused by low energy r.f. plasmas has not been, to our knowledge, studied so far in the case of symmetric planar plasma reactors that are usually used for PECVD processes. The reason is that, unlike non-symmetrical RIE reactors, such geometry prevents, basically, high-energy io...
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| Egile Nagusiak: | , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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National Institute of Telecommunications
2005-03-01
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| Saila: | Journal of Telecommunications and Information Technology |
| Gaiak: | |
| Sarrera elektronikoa: | https://jtit.pl/jtit/article/view/290 |
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