Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical chara...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
National Institute of Telecommunications
2023-06-01
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| Цуврал: | Journal of Telecommunications and Information Technology |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://jtit.pl/jtit/article/view/819 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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