Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical chara...
में बचाया:
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
National Institute of Telecommunications
2023-06-01
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| श्रृंखला: | Journal of Telecommunications and Information Technology |
| विषय: | |
| ऑनलाइन पहुंच: | https://jtit.pl/jtit/article/view/819 |
| टैग: |
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