Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation...
Gorde:
| Egile Nagusiak: | , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
National Institute of Telecommunications
2023-06-01
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| Saila: | Journal of Telecommunications and Information Technology |
| Gaiak: | |
| Sarrera elektronikoa: | https://jtit.pl/jtit/article/view/822 |
| Etiketak: |
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