Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation...
Furkejuvvon:
| Váldodahkkit: | , , , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
National Institute of Telecommunications
2023-06-01
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| Ráidu: | Journal of Telecommunications and Information Technology |
| Fáttát: | |
| Liŋkkat: | https://jtit.pl/jtit/article/view/822 |
| Fáddágilkorat: |
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