Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical chara...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , , , |
|---|---|
| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
National Institute of Telecommunications
2023-06-01
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| মালা: | Journal of Telecommunications and Information Technology |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://jtit.pl/jtit/article/view/819 |
| ট্যাগগুলো: |
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