The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characteri...
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| Główni autorzy: | , , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
National Institute of Telecommunications
2023-06-01
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| Seria: | Journal of Telecommunications and Information Technology |
| Hasła przedmiotowe: | |
| Dostęp online: | https://jtit.pl/jtit/article/view/821 |
| Etykiety: |
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