The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characteri...
Uloženo v:
| Hlavní autoři: | , , , , , , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
National Institute of Telecommunications
2023-06-01
|
| Edice: | Journal of Telecommunications and Information Technology |
| Témata: | |
| On-line přístup: | https://jtit.pl/jtit/article/view/821 |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|