Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.
Kaydedildi:
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Portfolio
2016-01-01
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| Seri Bilgileri: | Nature Communications |
| Online Erişim: | https://doi.org/10.1038/ncomms10276 |
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