Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.

Bibliografiset tiedot

Päätekijät:	Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, Mahesh G. Samant, Claudia Felser, Stuart S. P. Parkin
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Nature Portfolio 2016-01-01
Sarja:	Nature Communications
Linkit:	https://doi.org/10.1038/ncomms10276
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