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Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.

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Detalles Bibliográficos
Principais autores: Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, Mahesh G. Samant, Claudia Felser, Stuart S. P. Parkin
Formato: Artigo
Idioma:Inglês
Publicado: Nature Portfolio 2016-01-01
Series:Nature Communications
Acceso en liña:https://doi.org/10.1038/ncomms10276
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