Improved switching performance of magnetic tunnel junctions with Heusler compounds by insertion of resistive layers
The chemical templating layer (CTL) is ideally suited to grow ordered multicomponent Heusler compounds at temperatures compatible with complementary metal–oxide–semiconductor technology and at thickness necessary for their implementation as storage layers in magnetic random-access memory (MRAM). In...
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| Principais autores: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2025-12-01
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| coleção: | APL Materials |
| Acesso em linha: | https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0299310/20816804/121102_1_5.0299310.pdf |
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