Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.

Библиографические подробности

Главные авторы:	Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, Mahesh G. Samant, Claudia Felser, Stuart S. P. Parkin
Формат:	Artigo
Язык:	Inglês
Опубликовано:	Nature Portfolio 2016-01-01
Серии:	Nature Communications
Online-ссылка:	https://doi.org/10.1038/ncomms10276
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