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High-quality AlN films grown on chemical vapor-deposited graphene films

We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The st...

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Detalhes bibliográficos
Principais autores: Chen Bin-Hao, Hsu Hsiu-Hao, Lin David T.W.
Formato: Artigo
Idioma:Inglês
Publicado em: EDP Sciences 2016-01-01
Colecção:MATEC Web of Conferences
Acesso em linha:http://dx.doi.org/10.1051/matecconf/20166001004
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