Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering

Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional an...

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Bibliografiske detaljer

Udgivet i:	Superficies y vacío
Principais autores:	R. Bernal Correa, J. Montes Monsalve, A. Pulzara Mora, M. López López, A. Cruz Orea, J.A. Cardona
Format:	Artigo
Sprog:	Inglês
Udgivet:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2014
Fag:	Física, Astronomía y Matemáticas
Online adgang:	https://www.redalyc.org/articulo.oa?id=94233003005
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