Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering
Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional an...
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2014
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94233003005 |
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