Characterization of optical and structural properties of GaAsN layers grown by Molecular Beam Epitaxy

GaAsN layers were grown on GaAs(100) substrates by MBE employing a radio frequency (RF) plasma nitrogen source, and solid sources for Ga and As. The growth temperature was varied from 420 to 600 °C, and the GaAsN growth mode was in-situ monitored by reflection high-energy electron diffraction (RHEED...

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Bibliographic Details
Published in:Superficies y vacío
Main Authors: A. Pulzara-Mora, E. Cruz-Hernández, J. Rojas-Ramirez, R. Contreras-Guerrero, M. A. Aguilar-Frutis, M. Meléndez-Lira, C. Falcony-Guajardo, M. López-López, M. A. Vidal
Format: Artigo
Language:Inglês
Published: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2005
Subjects:
Física, Astronomía y Matemáticas
III
MBE
N semiconductors
Optical properties
Structural characteristics
Online Access:https://www.redalyc.org/articulo.oa?id=94218307
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