Caracterización de substratos de silicio de alta y baja resistividad mediante la estructura Al/SRO/Si y comparación con técnicas utilizando estructuras MOS
Nowadays Si high Resistivity substrates (Nd<1014 cm-3) are commonly used, especially in optoelectronic integrated circuits. However, standard MOS characterization methods fail to predict correctly the impurity density and the generation life time. This is due to the high resistance in series with th...
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| Udgivet i: | Superficies y vacío |
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| Principais autores: | , , |
| Format: | Artigo |
| Sprog: | Espanhol |
| Udgivet: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2004
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| Fag: | |
| Online adgang: | https://www.redalyc.org/articulo.oa?id=94217201 |
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