New observation of single electron trapping effect in Si nanoclusters embedded in SRO layer
I-V characteristics of Al/SRO/Si MOS devices were measured. Novel I-V curves, with extraordinary current peaks in bothpositive and negative bias, were observed. These current peaks are ascribed to the charging or discharging of the Sinanoclusters near the SRO/Si interface.
שמור ב:
| הוצא לאור ב: | Superficies y vacío |
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| Principais autores: | , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2004
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| נושאים: | |
| גישה מקוונת: | https://www.redalyc.org/articulo.oa?id=94217302 |
| תגים: |
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