New observation of single electron trapping effect in Si nanoclusters embedded in SRO layer
I-V characteristics of Al/SRO/Si MOS devices were measured. Novel I-V curves, with extraordinary current peaks in bothpositive and negative bias, were observed. These current peaks are ascribed to the charging or discharging of the Sinanoclusters near the SRO/Si interface.
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2004
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94217302 |
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