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Optical sensitivity of Al/SRO/Si MOS diodes

In this work, the I–V characteristics of an Al/SRO/Si MOS–like diode under illumination were studied. A strongly illumination–dependent photocurrent was observed although the structure was opaque on both sides. The possible mechanisms that create the photocurrent were studied. We believe that the ph...

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Veröffentlicht in:Revista Mexicana de Física
Hauptverfasser: Z. Yu, M. Aceves, J. Carrillo
Format: Artigo
Sprache:Inglês
Veröffentlicht: Sociedad Mexicana de Física A.C. 2006
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Online-Zugang:https://www.redalyc.org/articulo.oa?id=57028295017
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