Critical thickness of Ge / GaAs(001) epitaxial films
Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. Theselayers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show thatpseudomorphic samples with good structural quality can be obtained by this...
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94216410 |
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