Fabrication and characterization of n-type Ge1−xSnx- and Si1–x–yGeySnx-on-SOI junctionless transistors

Abstract Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future nanoelectronic applications owing to their high carrier mobilities and CMOS compatibility. However, ternary Si1−x−yGeySnx transistors have only theoretically been discussed, and there are only a few reports on lateral n-ty...

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Autors principals:	Oliver Steuer, Sayantan Ghosh, Daniel Schwarz, Michael Oehme, Sebastian Lehmann, René Hübner, Ciarán Fowley, Artur Erbe, Shengqiang Zhou, Manfred Helm, Gianaurelio Cuniberti, Slawomir Prucnal, Yordan M. Georgiev
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2025-12-01
Col·lecció:	Scientific Reports
Accés en línia:	https://doi.org/10.1038/s41598-025-31272-y
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