Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation
We examined the epitaxial growth of Ge _1− _x Sn _x thin film with x ∼ 0.50 on GaSb(111) substrate using a low-temperature MBE. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge _1− _x Sn _x thin film with x ∼ 0.50 with no strain was successfully grown on GaSb(111). F...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2024-01-01
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| Serie: | Applied Physics Express |
| Soggetti: | |
| Accesso online: | https://doi.org/10.35848/1882-0786/ad9190 |
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