QR code

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the stra...

Volledige beschrijving

Bewaard in:
Hoofdauteurs: Reem Al-Saigh, Mourad Baira, Bassem Salem, Bouraoui Ilahi
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: SpringerOpen 2018-06-01
Reeks:Nanoscale Research Letters
Onderwerpen:
GeSn
GeSiSn
Quantum dots
Direct bandgap
Mid-IR
Online toegang:http://link.springer.com/article/10.1186/s11671-018-2587-1
Tags: Voeg label toe
Geen labels, Wees de eerste die dit record labelt!

Gelijkaardige items