Growth and characterization of Ge1-xSnx alloys grown by magnetron sputter deposition
Single phase Ge1-xSnx alloys have been grown on Ge(100) and GaAs(100) substrates using a R. F. Sputtering system.Using HRXRD on asymmetrical planes in plane and in growth lattice parameters are obtained. A residual strain due to thedifferences in the linear thermal expansion coefficient between the...
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| Veröffentlicht in: | Superficies y vacío |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94216405 |
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