Critical thickness of Ge / GaAs(001) epitaxial films

Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. Theselayers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show thatpseudomorphic samples with good structural quality can be obtained by this...

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Bibliografiske detaljer
Udgivet i:Superficies y vacío
Main Authors: A. G. Rodríguez, A. Navarro Quezada, G. Hernández Sosa, M. A. Vidal, H. Navarro Contreras
Format: Artigo
Sprog:Inglês
Udgivet: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2003
Fag:
Física, Astronomía y Matemáticas
III
critical thinks
ray diffraction
High resolution X
Heterostructure IV
Online adgang:https://www.redalyc.org/articulo.oa?id=94216410
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