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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2020
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7475857/ https://ncbi.nlm.nih.gov/pubmed/32764315 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163447 |
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